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Creators/Authors contains: "Sheludiakov, S"

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  1. We used the method of electron spin resonance (ESR) to investigate the temperature-dependent recombination rate of H atoms in solid molecular hydrogen deuteride (HD). A 1.5 휇m thick solid molecular HD film was deposited at a rate of 2 monolayer/s, onto a gold surface maintained at T=1.5 K. H and D atoms were accumulated in the film by maintaining radio-frequency electric discharge above the film for 19 days. After further storage of the sample for 48 h, at T < 1 K, the D atom signal vanished. The concentration of H atoms was monitored as the sample was warmed stepwise from 1.1 K to 2.8 K. The recombination rate of H atoms in solid HD was found to be proportional to temperature in this range. 
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    Free, publicly-accessible full text available March 25, 2026
  2. We report on electron spin resonance studies of H atoms stabilized in solid H2 films at temperature 0.7 K and in a magnetic field of 4.6 T. The H atoms were produced by bombarding H2 films with 100 eV electrons from a radiofrequency discharge run in the sample cell. We observed a one order of magnitude faster H atom accumulation in the films made of para-H2 gas with a small ortho-H2 concentration (0.2% ortho-H2 ) as compared with those made from normal H2 gas content (75% ortho-H2 ). We also studied the influence of ortho-H2 molecules on spatial diffusion of H atoms in solid H2 films. The spatial diffusion of H atoms in both normal and para-H2 films is faster than the diffusion obtained from the measurement of H atom recombination. The rate of spatial diffusion of H atoms in para-H2 films was slower in comparison with that in the normal H2 films. We discuss possible explanations of these observations. 
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  3. null (Ed.)